Sensor which is equipped with small plasma sensor
for monitoring the process change by analyzing the gas discharged
to exhaust line of semiconductor /display manufacture facility
CVD, ALD, Etcher, Diffusion, All TM
Long-term usability without PM because it’s highly durable to pollutant
Realtime leak detection
DDry cleaning endpoint detection
Source fault detection
Starting pressure of discharge 5mT~10Torr
Detectors per a controller 1~7 (Max. 12)
Image sensor 2048 pixels
Spectral range 200~850nm
Optical resolution <0.95nm @25um slit
A/D resolution 16bit
Integration time Min. 7ms
Scan time(Interval time) Min. 50ms
Optical window Sapphire
Plasma source power Max. 30W
Power requirement 3.5A/12VDC
Operating system Win10
Software AOS (AEGIS Operating Software)
Communication Ethernet
Protocol Customizing available
Additional pumping N/A
Vacuum interface NW25 (Reducer available)
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Model Description
For Transfer/Process/Anneal Chamber
Contamination-free module included (patented)
AEGIS-7S For Transfer/Process/Anneal Chamber
Contamination-free module included (patented)
Advanced sensor and signal processing
AEGIS-7WD For Process Chamber
Contamination-free module included (patented)
OES module detachable type
AEGIS-7DLT For Process Chamber
Contamination-free module included (patented)
For exclusive customer
Model Description
SMC-10 Horizontal type
3U 19” rack mount type
SMC-10H Vertical type
Stand alone type
Model Description
WT Worktable type
RK 19” rack type
MC Moving cart type
LPA-75-AC-12 Local power adapter,
Concept & Configuration
● Certified ○ possible
Application Semiconductor FPD
All TM Ti WN OxALD Diffusion Etch All TM Anneal PECVD
Leak detection
Dry clean EPD
Source fault
Endpoint detection
In-situ leak detection
Realtime leak detection of semiconductor /display manufacture process chamber,
thereby preventing big accident beforehand
Usable to semiconductor CVD, ALD, Diffusion and All TM
Usable to display BP (Array), TSP, EN and All TC/HC
Improvement of yield and throughput
Dry cleaning endpoint detection
Chamber cleaning at periodic dry cleaning step
as well as optimal cleaning time are identifiable
Usable to semiconductor CVD, ALD, Diffusion
Usable to display BP(Array), TSP, EN 사용 가능
Improvement of throughput
Endpoint detection for non-plasma etch
Endpoint is identifiable at etch process in which endpoint is not detectable
to OES because the plasma in chamber is not used
Usable to semiconductor Etcher
Etch process in which Gas-phased or low RF power is used
Excellent end point detection performance even at low open ratio etch, comparing to OES
Endpoint detection for TSV
Endpoint detection performance at through silicon via (TSV) etch process
Usable at BOSCH process
Endpoint can be detected at low open ratio etch