products
제품
SPOES
传感器内置小型等离子体模块,通过分析半导体/面板生产设备的排出气体,
实时监测制造工艺的变化状态
CVD, ALD, Etcher, Diffusion, All TM
具有强大的抗污染能力,长期使用无需PM
实时监测泄露情况
侦测干刻工艺的终点(Dry cleaning endpoint)
侦测源头故障(Source fault)
Specifications
Starting pressure of discharge 5mT~10Torr
Detectors per a controller 1~7 (Max. 12)
Image sensor 2048 pixels
Spectral range 200~850nm
Optical resolution <0.95nm @25um slit
A/D resolution 16bit
Integration time Min. 7ms
Scan time(Interval time) Min. 50ms
Optical window Sapphire
Plasma source power Max. 30W
Power requirement 3.5A/12VDC
Operating system Win10
Software AOS (AEGIS Operating Software)
Communication Ethernet
Protocol Customizing available
Additional pumping N/A
Vacuum interface NW25 (Reducer available)
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Model
Detector
Model Description
AEGIS-7W
For Transfer/Process/Anneal Chamber
Contamination-free module included (patented)
AEGIS-7S For Transfer/Process/Anneal Chamber
Contamination-free module included (patented)
Advanced sensor and signal processing
AEGIS-7WD For Process Chamber
Contamination-free module included (patented)
OES module detachable type
AEGIS-7DLT For Process Chamber
Contamination-free module included (patented)
For exclusive customer
Controller
Model Description
SMC-10 Horizontal type
3U 19” rack mount type
SMC-10H Vertical type
Stand alone type
Accessories
Model Description
WT Worktable type
RK 19” rack type
MC Moving cart type
LPA-75-AC-12 Local power adapter,
75W
Concept & Configuration
Software
Operation
Analysis
Application
● Certified ○ possible
Application Semiconductor FPD
All TM Ti WN OxALD Diffusion Etch All TM Anneal PECVD
Leak detection
Dry clean EPD
Source fault
Endpoint detection
In-situ leak detection
可实时监测半导体/面板设备的工艺腔室是否有泄露,从而预防发生大型事故。
半导体领域可以在CVD,ALD,Diffusion,All TM上使用
面板领域可以在BP(Array),TSP,EN,All TC/HC上使用
改善产品的yield与throughput
Dry cleaning endpoint detection
在周期性的dry cleaning step中,可以监测腔室的清洁状态,从而确定最佳的清洁时间。
半导体领域可以在CVD,ALD,Diffusion上使用
面板领域可以在BP(Array),TSP,EN上使用
改善产品的throughput
Endpoint detection for non-plasma etch
腔室内无plasma时,可以侦测到原有的OES设备在etch工艺中无法侦测的endpoint
半导体领域可以在Etcher上使用
使用Gas-phased或者low RF power的etch工艺
在Low open ratio etch工艺中,相比OES,endpoint的侦测能力更好
Endpoint detection for TSV
可侦测Si贯通电极(TSV, Through Silicon Via)etch工艺的endpoint
可使用于BOSCH工艺
在Low open ratio etch工艺中亦可侦测endpoint